INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES

[11] FOLL H, 1981, DEFECTS SEMICONDUCTO, P173

[12] METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 139 - 141

[13] HUTCHINSON JL, 1983, I PHYSICS C SERIES, V67, P21

[14] INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[15] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 516 - 525

[16] PONCE FA, 1983, I PHYSICS C SERIES, V67, P65

[17] SURFACE-MICRO-DEFECT AND INNER-MICRO-DEFECT IN ANNEALED SILICON-WAFER CONTAINING OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 269 - 273

[18] TAKAOKA H, 1979, JAPAN J APPL PHY S18, V18, P179

[19] Tan T. Y., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P163

[20] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 615 - 631

[11] FOLL H, 1981, DEFECTS SEMICONDUCTO, P173

[12] METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 139 - 141

[13] HUTCHINSON JL, 1983, I PHYSICS C SERIES, V67, P21

[14] INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[15] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 516 - 525

[16] PONCE FA, 1983, I PHYSICS C SERIES, V67, P65

[17] SURFACE-MICRO-DEFECT AND INNER-MICRO-DEFECT IN ANNEALED SILICON-WAFER CONTAINING OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 269 - 273

[18] TAKAOKA H, 1979, JAPAN J APPL PHY S18, V18, P179

[19] Tan T. Y., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P163

[20] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 615 - 631