INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES

被引：136
作者：
BENDER, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 01期
关键词：
D O I：
10.1002/pssa.2210860126
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：245 / 261
页数：17
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