INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES

被引：136

作者：

BENDER, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 01期

关键词：

D O I：

10.1002/pssa.2210860126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：245 / 261

页数：17

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