MODELS FOR MID-GAP CENTERS IN GALLIUM-ARSENIDE

被引：17

作者：

BLAKEMORE, JS

RAHIMI, S

机构：

[1] Oregon Graduate Center Beaverton, OR, United States

来源：

SEMICONDUCTORS AND SEMIMETALS | 1984年 / 20卷 / 20期

关键词：

The authors Wish to acknowledge the support of the National Science Foundation; through DMR Grants 79 16454 and 830573 1; for studies of semi-insulating gallium arsenide which led to the writing of this chapter. We also wish to thank G. A. Baraff; J; D; Dow; P; DzWig; National Science Foundation; through DMR Grants;

D O I：

10.1016/S0080-8784(08)62776-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：233 / 361

页数：129

共 350 条

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