MODELS FOR MID-GAP CENTERS IN GALLIUM-ARSENIDE

被引：17
作者：
BLAKEMORE, JS
RAHIMI, S
机构：
[1] Oregon Graduate Center Beaverton, OR, United States
来源：
SEMICONDUCTORS AND SEMIMETALS | 1984年 / 20卷 / 20期
关键词：
The authors Wish to acknowledge the support of the National Science Foundation; through DMR Grants 79 16454 and 830573 1; for studies of semi-insulating gallium arsenide which led to the writing of this chapter. We also wish to thank G. A. Baraff; J; D; Dow; P; DzWig; National Science Foundation; through DMR Grants;
D O I：
10.1016/S0080-8784(08)62776-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：233 / 361
页数：129
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