MICROFABRICATION AND OPTICAL STUDY OF REACTIVE ION ETCHED INGAASP/INP AND GAAS/GAALAS QUANTUM WIRES

被引：51
作者：
IZRAEL, A
SERMAGE, B
MARZIN, JY
OUGAZZADEN, A
AZOULAY, R
ETRILLARD, J
THIERRYMIEG, V
HENRY, L
机构：
[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE
[2] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 09期
关键词：
D O I：
10.1063/1.102676
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Microfabrication of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wire structures with dimensions down to 30 nm has been achieved. From time-resolved photoluminescence, the importance of surface recombination effects is outlined in both systems. It is shown that the use of epitaxial overgrowth leads to a significant increase of the carrier lifetime in GaAs/GaAlAs wires, so that emission of very narrow wires (width<40 nm) can be detected. The possible assignment of the observed shifts of the cw photoluminescence peak energies to additional lateral confinement effects is discussed.
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页码：830 / 832
页数：3
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