THE MOTT INSULATOR MODEL OF THE SI(111)-(2X1) SURFACE

被引:16
作者
REDONDO, A [1 ]
GODDARD, WA [1 ]
MCGILL, TC [1 ]
机构
[1] CALTECH,THOMAS J WATSON LAB APPL PHYS,PASADENA,CA 91125
关键词
D O I
10.1016/0039-6028(83)90529-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:49 / 61
页数:13
相关论文
共 36 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1975, 12 (04) :1410-1417
[3]  
BOBROWICZ FW, 1977, MODERN THEORETICAL C, V3, P79
[4]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[5]   ELECTRONIC STATES AND ELECTRON-PHONON COUPLING AT THE 2X1 RECONSTRUCTED SI(111) SURFACE [J].
CASULA, F ;
SELLONI, A .
SOLID STATE COMMUNICATIONS, 1981, 37 (06) :495-499
[6]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[7]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[8]   THEORETICAL-STUDIES OF SI(111) SURFACE-STRUCTURES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :856-859
[9]   NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON [J].
CIRACI, S ;
BATRA, IP .
SOLID STATE COMMUNICATIONS, 1976, 18 (08) :1149-1152
[10]   CORRELATION-EFFECTS ON THE ELECTRONIC-STRUCTURE OF 1X1 AND 2X1 RECONSTRUCTED SI(111) SURFACES [J].
DELSOLE, R ;
CHADI, DJ .
PHYSICAL REVIEW B, 1981, 24 (12) :7431-7434