POROUS SILICON IN SOLAR-CELLS - A REVIEW AND A DESCRIPTION OF ITS APPLICATION AS AN AR COATING

被引:217
作者
MENNA, P [1 ]
DI FRANCIA, G [1 ]
LAFERRARA, V [1 ]
机构
[1] UNIV NAPLES FEDERICO II, DIPARTIMENTO FIS MOSTRA OLTREMARE, I-80125 NAPLES, ITALY
关键词
D O I
10.1016/0927-0248(94)00193-6
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper, we first review the potential applications of porous Si in solar cell structures. Then we describe the fabrication of this material by both electrochemical and chemical etching methods, providing some guidelines for a better comprehension of the influence of each process parameter. After that, the properties of porous Si in terms of morphology, structure, photoluminescence, and electroluminescence emissions are summarized together with their actual photovoltaic applications. The results of our study specifically address the creation of an antireflection (AR) coating for polycrystalline Si based solar cells. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, chemical etching method. The formation of a porous Si layer about 0.5 mu m thick on the polycrystalline wafer results in an effective reflectance coefficient R(eff) lower than 5% in the wavelength region from 350 to 1150 nm. The drastic reduction of the optical losses is controllable by the process parameters and is almost independent of the starting substrate.
引用
收藏
页码:13 / 24
页数:12
相关论文
共 39 条
[1]   EVIDENCE OF NANOSTRUCTURES OF DIFFERENT SIZE IN POROUS SILICON [J].
AMATO, G ;
DIFRANCIA, G ;
MENNA, P ;
NINNO, D .
EUROPHYSICS LETTERS, 1994, 25 (06) :471-476
[2]   FORMATION AND PROPERTIES OF POROUS SILICON FILM [J].
ARITA, Y ;
SUNOHARA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :285-295
[3]   QUANTUM-SIZE EFFECT IN THE PHOTOLUMINESCENCE OF POROUS SILICON LAYERS [J].
ASNIN, VM ;
AVERKIEV, NS ;
CHURILOV, AB ;
MARKOV, II ;
MOKROUSOV, NE ;
SILOV, AY ;
STEPANOV, VI .
SOLID STATE COMMUNICATIONS, 1993, 87 (09) :817-820
[4]  
AVERKIEV NS, 1992, JETP LETT+, V55, P657
[5]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[7]   POLYCRYSTALLINE SILICON SOLAR-CELLS WITH A MECHANICALLY FORMED TEXTURIZATION [J].
BENDER, H ;
SZLUFCIK, J ;
NUSSBAUMER, H ;
PALMERS, G ;
EVRARD, O ;
NIJS, J ;
MERTENS, R ;
BUCHER, E ;
WILLEKE, G .
APPLIED PHYSICS LETTERS, 1993, 62 (23) :2941-2942
[8]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[9]   VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE [J].
BSIESY, A ;
MULLER, F ;
LIGEON, M ;
GASPARD, F ;
HERINO, R ;
ROMESTAIN, R ;
VIAL, JC .
PHYSICAL REVIEW LETTERS, 1993, 71 (04) :637-640
[10]   PROGRESS TOWARD CRYSTALLINE-SILICON-BASED LIGHT-EMITTING-DIODES [J].
CANHAM, L .
MRS BULLETIN, 1993, 18 (07) :22-28