DEFECT STRUCTURE OF INXGA1-XAS/GAAS GROWN ON MISORIENTED (100) SILICON BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

CHRISTOU, A

FLEVARIS, N

GEORGAKILAS, A

ILIADIS, AA

机构：

[1] ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SALONIKA,GREECE

[2] FAN RES & TECHNOL,HERAKLION,GREECE

[3] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

MATERIALS LETTERS | 1989年 / 8卷 / 3-4期

关键词：

D O I：

10.1016/0167-577X(89)90138-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：109 / 111

页数：3

共 6 条

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CHRISTOU, A .

MATERIALS LETTERS, 1989, 7 (12) :456-460

[2]

LEE CP, 1987, IEEE ELECTR DEVICE L, V8, P85

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[4] MBE GROWTH OF GA1-XINXAS ALLOY ON SI SUBSTRATE [J].

OE, K ;

TAKEUCHI, H .

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[5] 1ST ROOM-TEMPERATURE CW OPERATION OF A GAINASP-INP LIGHT-EMITTING DIODE ON A SILICON SUBSTRATE [J].

RAZEGHI, M ;

BLONDEAU, R ;

DEFOUR, M ;

OMNES, F ;

MAUREL, P ;

BRILLOUET, F .

APPLIED PHYSICS LETTERS, 1988, 53 (10) :854-855

[6] HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES [J].

RAZEGHI, M ;

OMNES, F ;

DEFOUR, M ;

MAUREL, P .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :209-211

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