MEASUREMENTS OF THRESHOLD CARRIER DENSITY OF III-V SEMICONDUCTOR-LASER DIODES

被引：10
作者：
SU, CB
OLSHANSKY, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期
关键词：
D O I：
10.1063/1.94527
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：856 / 858
页数：3
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