ORIENTATION DEPENDENCE OF STACKING-FAULT NUCLEATION IN SILICON

被引：3

作者：

RAVI, KV ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICONDUCTOR PROD DIV,MAT RES LAB,5005 E MCDOWELL RD,PHOENIX,AZ

来源：

PHILOSOPHICAL MAGAZINE | 1975年 / 31卷 / 02期

关键词：

D O I：

10.1080/14786437508228940

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：405 / 410

页数：6

共 50 条

[1] ORIENTATION DEPENDENCE OF STACKING-FAULT NUCLEATION AND GROWTH IN SILICON
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