A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON

被引：36

作者：

DANNEFAER, S ^{[1
]}

FRUENSGAARD, N ^{[1
]}

KUPCA, S ^{[1
]}

HOGG, B ^{[1
]}

KERR, D ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK

来源：

CANADIAN JOURNAL OF PHYSICS | 1983年 / 61卷 / 03期

关键词：

D O I：

10.1139/p83-057

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：451 / 459

页数：9

共 26 条

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[3]

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[8]

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[9] PHOTO-EPR OF DISLOCATIONS IN SILICON [J].

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[10] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

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