ANNEALING EFFECT IN PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON

被引：0
|
作者：
GNADINGER, AP [1 ]
KOSICKI, BB [1 ]
机构：
[1] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C87 / C87
页数：1
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