HOT-ELECTRONS AND TRAPS IN A-SIO2

被引：7

作者：

KAMOCSAI, RL

POROD, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90319-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1825 / 1829

页数：5

共 8 条

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[7] DYNAMIC-MODEL OF TRAPPING-DETRAPPING IN SIO2 [J].

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