NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE

被引:18
作者
ASHBY, A
ROBERTS, GG
ASHEN, DJ
MULLIN, JB
机构
[1] NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
[2] RSRE,MALVERN,ENGLAND
关键词
D O I
10.1016/0038-1098(76)91699-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:61 / 63
页数:3
相关论文
共 7 条
[1]   INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS [J].
HAISTY, RW ;
HOYT, PL .
SOLID-STATE ELECTRONICS, 1967, 10 (08) :795-&
[2]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[3]  
MULLIN JB, 1964, J PHYS CHEM SOLIDS, V26, P782
[4]   STUDY OF LOCALIZED LEVELS IN SEMI-INSULATORS BY COMBINED MEASUREMENTS OF THERMALLY ACTIVATED OHMIC AND SPACE-CHARGE-LIMITED CONDUCTION [J].
ROBERTS, GG ;
SCHMIDLIN, FW .
PHYSICAL REVIEW, 1969, 180 (03) :785-+
[5]   STUDY OF LOCALIZED LEVELS .2. MEANING OF TEMPERATURE-INDUCED CHANGES IN ACTIVATION ON ENERGIES FOR ELECTRICAL-CONDUCTION [J].
SCHMIDLI.FW ;
ROBERTS, GG .
PHYSICAL REVIEW B, 1974, 9 (04) :1578-1590
[6]   RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].
SZE, SM ;
IRVIN, JC .
SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&
[7]  
SZE SM, PHYSICS SEMICONDUCTO, P20