共 29 条
[11]
IWAMI M, 1980, J ELECTROCHEM SOC, V80, P102
[12]
BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON
[J].
PHYSICAL REVIEW B,
1981, 24 (06)
:3354-3359
[13]
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[14]
SANKEY OF, UNPUB
[16]
EFFECTS OF VARIATIONS OF SILICIDE CHARACTERISTICS ON THE SCHOTTKY-BARRIER HEIGHT OF SILICIDE-SILICON INTERFACES
[J].
PHYSICAL REVIEW B,
1983, 28 (08)
:4593-4601
[17]
CORRELATION BETWEEN SCHOTTKY-BARRIER HEIGHT AND PHASE STOICHIOMETRY STRUCTURE OF SILICIDE-SILICON INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 20 (03)
:688-689
[18]
UNIFIED DEFECT MODEL AND BEYOND
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980, 17 (05)
:1019-1027
[19]
AL-GAAS (001) SCHOTTKY-BARRIER FORMATION
[J].
JOURNAL OF APPLIED PHYSICS,
1983, 54 (08)
:4474-4481
[20]
SZE SM, 1981, PHYSICS SEMICONDUCTO