MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS

被引：64

作者：

ASAHI, H

KAWAMURA, Y

NAGAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4928 / 4931

页数：4

共 16 条

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