DYNAMIC STUDY OF THE FORMATION OF METAL-SEMICONDUCTOR INTERFACES

被引：0

作者：

LELAY, G

机构：

来源：

VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1985年 / 40卷 / 226期

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D O I：

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中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：167 / 172

页数：6

共 16 条

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[8] ANGLE RESOLVED PHOTOEMISSION MEASUREMENTS ON AG-SI(111) 7X7 INTERFACES [J].

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[9]

KERN R, 1977, J PHYSIQUE, P155

[10]

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