ELECTRIC-FIELD-INDUCED QUENCHING OF SHALLOW AND DEEP BOUND EXCITONS IN SILICON

被引：13
作者：
WEMAN, H
ZHAO, QX
MONEMAR, B
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.38.6185
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6185 / 6190
页数：6
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