INP AND INGAASP SEMICONDUCTING MATERIALS FOR OPTICAL COMMUNICATIONS

被引:0
作者
MAHAJAN, S
KERAMIDAS, VG
WERNICK, JH
机构
[1] BELL COMM RES INC,PHOTON & ELECTR MAT RES GRP,MURRAY HILL,NJ 07974
[2] BELL COMM RES INC,DIV MAT SCI,MURRAY HILL,NJ 07974
来源
JOURNAL OF METALS | 1984年 / 36卷 / 08期
关键词
D O I
10.1007/BF03338527
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:37 / 41
页数:5
相关论文
共 36 条
[1]   DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J].
ANTYPAS, GA ;
EDGECUMBE, J .
JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) :132-138
[2]   GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].
ANTYPAS, GA ;
MOON, RL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577
[3]   INP SYNTHESIS AND LEC GROWTH OF TWIN-FREE CRYSTALS [J].
BONNER, WA .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :21-31
[4]   EFFECT OF TEMPERATURE AND SULFUR DOPING ON THE PLASTIC-DEFORMATION OF INP SINGLE-CRYSTALS [J].
BRASEN, D ;
BONNER, WA .
MATERIALS SCIENCE AND ENGINEERING, 1983, 61 (02) :167-172
[5]   THE GROWTH OF DISLOCATION-FREE GE-DOPED INP [J].
BROWN, GT ;
COCKAYNE, B ;
MACEWAN, WR .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :369-372
[6]   CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J].
CHIN, AK ;
ZIPFEL, CL ;
MAHAJAN, S ;
ERMANIS, F ;
DIGIUSEPPE, MA .
APPLIED PHYSICS LETTERS, 1982, 41 (06) :555-557
[7]  
DECREMOUX B, 1981, C SERIES I PHYSICS, V56, P115
[8]   SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J].
DENTAI, AG ;
LEE, TP ;
BURRUS, CA ;
BUEHLER, E .
ELECTRONICS LETTERS, 1977, 13 (16) :484-485
[9]   STACKING-FAULTS AND SUBSTRUCTURE IN GAAS-(GA,AL)AS HETERO-EPITAXIAL LAYERS .1. ORIGIN AND ELIMINATION [J].
DUTT, BV ;
MAHAJAN, S ;
ROEDEL, RJ ;
SCHWARTZ, GP ;
MILLER, DC ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1573-1578
[10]   OBSERVATION OF DARK DEFECTS RELATED TO DEGRADATION IN INGAASP-INP DH LASERS UNDER ACCELERATED OPERATION [J].
FUKUDA, M ;
WAKITA, K ;
IWANE, G .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L87-L90