REVIEW OF RADIATION-DAMAGE TO SILICON SOLAR CELLS

被引：27
作者：
CURTIN, DJ
STATLER, RL
机构：
[1] COMSAT LABS, CLARKSBURG, MD 20734 USA
[2] USN, RES LAB, WASHINGTON, DC USA
来源：
IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS | 1975年 / 11卷 / 04期
关键词：
D O I：
10.1109/TAES.1975.308112
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
引用
收藏
页码：499 / 513
页数：15
相关论文
共 50 条
[21]   RADIATION-DAMAGE IN E-BEAM ANNEALED ION-IMPLANTED SILICON SOLAR-CELLS [J].
HERMANN, AM ;
WEINBERG, I .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03) :273-273
[22]   STABILIZATION OF RADIATION-DAMAGE IN A SILICON DIODE RADIATION DETECTOR [J].
JONES, D ;
SCHUMACHER, D .
INTERNATIONAL JOURNAL OF RADIATION ONCOLOGY BIOLOGY PHYSICS, 1980, 6 (01) :109-110
[23]   RADIATION-DAMAGE IN INP SINGLE-CRYSTALS AND SOLAR-CELLS [J].
YAMAGUCHI, M ;
UEMURA, C ;
YAMAMOTO, A .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1429-1436
[24]   EFFECTS OF IRRADIATION TEMPERATURE ON RADIATION-DAMAGE IN INP SOLAR-CELLS [J].
YAMAGUCHI, M .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) :3679-3683
[25]   AN EVALUATION BY SOLAR SIMULATION OF RADIATION DAMAGE IN SILICON SOLAR CELLS [J].
STATLER, RL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :31-+
[26]   RADIATION-DAMAGE BY NEUTRONS AND PHOTONS TO SILICON DETECTORS [J].
GILL, K ;
HALL, G ;
ROE, S ;
SOTTHIBANDHU, S ;
WHEADON, R ;
GIUBELLINO, P ;
RAMELLO, L .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 322 (02) :177-188
[27]   INVESTIGATION OF RADIATION-DAMAGE IN SILICON BY A BACKSCATTERING METHOD [J].
GOTZ, G ;
HEHL, K ;
SCHWABE, F ;
GLASER, E .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01) :27-32
[28]   INFLUENCE OF IRRADIATION INTENSITY ON RADIATION-DAMAGE OF SILICON [J].
ZOLOTUKHIN, AA ;
KOVALENKO, AK ;
MESHCHERYAKOVA, TM ;
MILEVSKII, LS ;
PAGAVA, TA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06) :800-800
[29]   RADIATION-DAMAGE TO SURFACE-LAYERS OF SILICON [J].
VOLOGDIN, EN ;
ZHUKOVA, GA ;
MORDKOVICH, VN .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04) :572-572
[30]   RECENT RESULTS OF RADIATION-DAMAGE STUDIES IN SILICON [J].
BATES, SJ ;
MUNDAY, DJ ;
PARKER, MA ;
ANGHINOLFI, F ;
CHILINGAROV, A ;
CIASNOHOVA, A ;
GLASER, M ;
HEIJNE, E ;
JARRON, P ;
LEMEILLEUR, F ;
SANTIARD, JC ;
BONINO, R ;
CLARK, AG ;
KAMBARA, H ;
GOSSLING, C ;
LISOWSKI, B ;
ROLF, A ;
PILATH, S ;
FEICK, H ;
FRETWURST, E ;
LINDSTROM, G ;
SCHULZ, T ;
BARDOS, RA ;
GORFINE, GW ;
MOORHEAD, GF ;
TAYLOR, GN ;
TOVEY, SN .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 344 (01) :228-236
12345