HOT-ELECTRON EFFECT IN SI(111) INVERSION LAYER AT LOW-TEMPERATURES

被引：4

作者：

SHINBA, Y ^{[1
]}

NAKAMURA, K ^{[1
]}

FUKUCHI, M ^{[1
]}

SAKATA, M ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 12期

关键词：

D O I：

10.1143/JPSJ.51.3908

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3908 / 3914

页数：7

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