HOT-ELECTRON EFFECT IN SI(111) INVERSION LAYER AT LOW-TEMPERATURES

被引：4
|
作者：
SHINBA, Y [1 ]
NAKAMURA, K [1 ]
FUKUCHI, M [1 ]
SAKATA, M [1 ]
机构：
[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 12期
关键词：
D O I：
10.1143/JPSJ.51.3908
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：3908 / 3914
页数：7
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