DECONVOLUTION OF THE IMPEDANCE OF THE SILICON ELECTROLYTE INTERFACE BY POTENTIAL-MODULATED-MICROWAVE MEASUREMENTS

被引：28

作者：

SCHLICHTHORL, G

PETER, LM

机构：

[1] School of Chemistry, University of Bath

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 12期

关键词：

D O I：

10.1149/1.2059383

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel method, based on the measurement of potential-modulated microwave reflectivity changes, is proposed for the deconvolution of the impedance of the semiconductor/electrolyte interface. Experimental results for the silicon/aqueous fluoride system show that this method can be used to separate space-charge and surface-capacitance contributions. It is shown that the pH dependence of the flatband potential of n-Si(111) in fluoride solutions is Nemstian from pH 1.2 to 13.

引用

页码：L171 / L173

页数：3

共 8 条

[1] INSITU STM OBSERVATIONS OF THE ETCHING OF N-SI(111) IN NAOH SOLUTIONS [J].