PLASMA ANODIC-OXIDATION OF INP

被引：6

作者：

FUYUKI, T

MORIUCHI, S

MATSUNAMI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 10期

关键词：

D O I：

10.1143/JJAP.22.1574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1574 / 1576

页数：3

共 8 条

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APPLIED PHYSICS LETTERS, 1979, 34 (11) :807-808

[2] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].

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PARK, HM ;

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SUGANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713

[3]

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[4] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J].

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SAKAI, Y .

THIN SOLID FILMS, 1979, 56 (1-2) :215-223

[5] PLASMA-GROWN OXIDE ON INP [J].

KANAZAWA, K ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L211-L213

[6] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2151-2156

[7] INTERFACE CHARACTERISTICS OF INP MOS CAPACITORS [J].

PANDE, KP ;

ROBERTS, GG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1470-1473

[8] INP HIGH MOBILITY ENHANCEMENT MISFETS USING ANODICALLY GROWN DOUBLE-LAYER GATE INSULATOR [J].

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ELECTRONICS LETTERS, 1982, 18 (17) :742-743

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