MICROSTRUCTURE AND ORIENTATION EFFECTS IN DIAMOND THIN-FILMS

被引：22

作者：

DENATALE, JF

HARKER, AB

FLINTOFF, JF

机构：

[1] Rockwell International Science Center, Thousand Oaks

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.348851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure and orientation of diamond thin films grown by plasma assisted chemical vapor deposition have been studied as functions of growth temperature, substrate identity, and substrate pre-treatment. Results indicate that for growth temperatures below 650-degrees-C, competition between film growth and etching can lead to preferential (110) oriented films on a variety of substrate materials. This orientation can be globally sustained during growth by the occurrence of (111) planar defects.

引用

页码：6456 / 6460

页数：5

共 6 条

[1] TEMPERATURE AND REACTIVE ETCHING EFFECTS ON THE MICROSTRUCTURE OF MICROWAVE PLASMA DEPOSITED DIAMOND FILMS [J].