SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2

被引:5
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OGURA, A
AIZAKI, N
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10.1063/1.102433
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O59 [应用物理学];
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页码:547 / 549
页数:3
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共 21 条
[1]  
Akasaka Y., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P488
[2]  
Akiyama S., 1983, International Electron Devices Meeting 1983. Technical Digest, P352
[3]   HIGH-TEMPERATURE STABILITY OF SI/SIO2 INTERFACES AND THE INFLUENCE OF SIO FLUX ON THERMOMIGRATION OF IMPURITIES IN SIO2 [J].
CELLER, GK ;
TRIMBLE, LE .
APPLIED PHYSICS LETTERS, 1988, 53 (25) :2492-2494
[4]   CATALYTIC EFFECT OF SIO ON THERMOMIGRATION OF IMPURITIES IN SIO2 [J].
CELLER, GK ;
TRIMBLE, LE .
APPLIED PHYSICS LETTERS, 1989, 54 (15) :1427-1429
[5]   HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF SILICON-ON-INSULATOR FORMED BY HIGH-DOSE OXYGEN IMPLANTATION [J].
CHANG, PH ;
MAO, BY .
APPLIED PHYSICS LETTERS, 1987, 50 (03) :152-154
[6]  
COLLINGE JP, 1987, ELECTRON LETT, V23, P1162
[7]  
COLLINGE JP, 1986, IEEE ELECVT DEVICE L, V7, P244
[8]   CRYSTALLOGRAPHIC ORIENTATION CONTROL OF SILICON STRIPES IN SIO2 GROOVES USING A NEW DOUBLE LASER ANNEALING TECHNIQUE [J].
EGAMI, K ;
KIMURA, M ;
HAMAGUCHI, T .
APPLIED PHYSICS LETTERS, 1984, 44 (10) :962-964
[9]  
EGAMI K, 1985, MATER RES SOC S P, V35, P669
[10]   DEPENDENCE OF GROWTH LENGTH OF SINGLE SILICON-CRYSTALS ON SCANNING DIRECTION OF LASER-BEAM IN LATERAL SEEDING PROCESS [J].
FUJII, E ;
SENDA, K ;
EMOTO, F ;
HIROSHIMA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2633-2636