ELECTRON-TRANSPORT IN TA2O5 FILMS

被引：15

作者：

BRAZIS, R ^{[1
]}

PIPINYS, P ^{[1
]}

RIMEIKA, A ^{[1
]}

LAPEIKA, V ^{[1
]}

机构：

[1] VILNIUS STATE PEDAG INST,DEPT PHYS,VILNIUS 232034,LITHUANIA,USSR

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1990年 / 9卷 / 03期

关键词：

D O I：

10.1007/BF00725819

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：266 / 267

页数：2

共 14 条

[1] STEADY AND TRANSIENT CONDUCTION PROCESSES IN ANODIC TANTALUM OXIDE [J].

ARIS, FC ;

LEWIS, TJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (09) :1067-1083

[2]

BOHKARI WH, 1987, INT J ELECTRON, V62, P567

[3] TEMPERATURE-DEPENDENCE OF CURRENTS IN THIN-FILMS OF SILICON-OXIDE [J].

BRAZIS, R ;

PIPINYS, P ;

RIMEIKA, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (01) :K69-K71

[4]

DALIDCHIK FI, 1978, ZH EKSP TEOR FIZ+, V74, P4722

[5]

HUGHES DM, 1974, APPL PHYS, V7, P2881

[6]

JAIN S, 1988, SEMICOND SCI TECH, V3, P693

[7] DC ELECTROLUMINESCENCE ON M-I-S STRUCTURES IN THIN-FILMS [J].

MATSUMOTO, H ;

TANAKA, S ;

YABUMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) :1543-1548

[8] ELECTRON TRANSPORT MECHANISMS IN THIN INSULATING FILMS [J].

MEAD, CA .

PHYSICAL REVIEW, 1962, 128 (05) :2088-&

[9] HIGH-FIELD CONDUCTION MECHANISM CHANGES IN ANODIC WO3 AND TA2O5 FILMS [J].

NAZAR, FM ;

ATIQ, MT .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1981, 51 (02) :165-171

[10] OXIDATION TEMPERATURE-DEPENDENCE OF THE DC ELECTRICAL-CONDUCTION CHARACTERISTICS AND DIELECTRIC STRENGTH OF THIN TA2O5 FILMS ON SILICON [J].

OEHRLEIN, GS .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1587-1595

← 1 2 →