THE EFFECTIVENESS OF CHROMIUM AND TIW AS DIFFUSION-BARRIERS FOR AUZN/AU CONTACTS IN INP JUNCTION FIELD-EFFECT TRANSISTORS

被引：4

作者：

BOOS, JB ^{[1
]}

KRUPPA, W ^{[1
]}

PAPANICOLAOU, NA ^{[1
]}

机构：

[1] SACHS FREEMAN ASSOCIATES,LANDOVER,MD 20785

来源：

THIN SOLID FILMS | 1988年 / 162卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(88)90204-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：161 / 169

页数：9

共 14 条

[1] PLANAR FULLY ION-IMPLANTED INP POWER JUNCTION FETS [J].

BOOS, JB ;

BINARI, SC ;

KELNER, G ;

THOMPSON, PE ;

WENG, TH ;

PAPANICOLAOU, NA ;

HENRY, RL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :273-276

[2] INTER-DIFFUSION AND COMPOUND FORMATION IN THE C-SI/PTSI/(TI-W)/A1 SYSTEM [J].

CANALI, C ;

CELOTTI, G ;

FANTINI, F ;

ZANONI, E .

THIN SOLID FILMS, 1982, 88 (01) :9-23

[3] LOW-RESISTANCE OHMIC CONTACTS TO P-INP [J].

CHENG, CL ;

COLDREN, LA ;

MILLER, BI ;

RENTSCHLER, JA ;

SHEN, CC .

ELECTRONICS LETTERS, 1982, 18 (17) :755-756

[4] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS [J].

HENRY, HG ;

DAWSON, DE ;

LEMNIOS, ZJ ;

KIM, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1100-1103

[5]

HOLLAND L, 1965, THIN FILM MICROELECT, P6

[6] SMALL-SIGNAL CHARACTERISTICS OF INP JUNCTION FETS [J].

KRUPPA, W ;

BOOS, JB .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :223-225

[7] LOW RESISTANCE OHMIC CONTACTS TO NORMAL-INP AND PARA-INP [J].

KUPHAL, E .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :69-&

[8] STUDIES OF TI-W-AU METALLIZATION ON ALUMINUM [J].

NOWICKI, RS ;

HARRIS, JM ;

NICOLET, MA ;

MITCHELL, IV .

THIN SOLID FILMS, 1978, 53 (02) :195-205

[9] CHROMIUM THIN-FILM AS A BARRIER TO INTERACTION OF PD2SI WITH AL [J].

OLOWOLAFE, JO ;

NICOLET, MA ;

MAYER, JW .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :413-415

[10]

SHAPPIRIO JR, 1985, SOLID STATE TECHNOL, V28, P161

← 1 2 →