A THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIER

被引：32
作者：
ARCHIBALD, IW
ABRAM, RA
机构：
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 48卷 / 02期
关键词：
D O I：
10.1080/13642818308226465
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：111 / 125
页数：15
相关论文
共 6 条
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[6]   INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].
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