LOW-RESISTANCE MOS TECHNOLOGY USING SELF-ALIGNED REFRACTORY SILICIDATION

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[2] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 874 - +

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[4] HIGUCHI K, 1983, JPN J APPL PHYS S, V22, P609

[5] HIGUCHI K, 1982, 14TH P C 1982 INT SO

[6] LAU CK, 1982, DEC IEDM, P714

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[10] A SELF-ALIGNED MO-SILICIDE FORMATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L57 - L59

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[2] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 874 - +

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[4] HIGUCHI K, 1983, JPN J APPL PHYS S, V22, P609

[5] HIGUCHI K, 1982, 14TH P C 1982 INT SO

[6] LAU CK, 1982, DEC IEDM, P714

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[10] A SELF-ALIGNED MO-SILICIDE FORMATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L57 - L59