CARRIER-SIGN REVERSAL IN BI-DOPED BULK AMORPHOUS-SEMICONDUCTORS GE20TE80-XBIX

被引：57
作者：
BHATIA, KL
PARTHASARATHY, G
SHARMA, A
GOPAL, ESR
机构：
[1] MAHARSHI DAYANAND UNIV,DEPT PHYS,ROHTAK 124001,HARYANA,INDIA
[2] UNIV GESAMTHSCH PADERBORN,FACHBEREICH PHYS,D-4790 PADERBORN,FED REP GER
[3] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.38.6342
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6342 / 6344
页数：3
相关论文
共 23 条
[1]   HIGH-PRESSURE STUDIES ON GE-TE GLASSES - EVIDENCE FOR A CRITICAL COMPOSITION IN IV-VI CHALCOGENIDE GLASSY SYSTEMS [J].
ASOKAN, S ;
PARTHASARATHY, G ;
GOPAL, ESR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (01) :49-60
[2]  
BANDYOPADYAY AK, 1980, REV SCI INSTRUM, V51, P156
[3]   MORPHOLOGICAL STRUCTURE OF BISMUTH-DOPED N-TYPE AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].
BHATIA, KL ;
GOSAIN, DP ;
PARTHASARATHY, G ;
GOPAL, ESR .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (12) :1281-1284
[4]   EVIDENCE OF 2 BI SITES FROM ELECTRON-PARAMAGNETIC-RES OF MN-2+ IN BI-DOPED AMORPHOUS-GERMANIUM CHALCOGENIDES [J].
BHATIA, KL ;
GOSAIN, DP ;
BHATNAGAR, VK .
PHYSICAL REVIEW B, 1987, 35 (09) :4503-4506
[5]   STRUCTURAL-CHANGES INDUCED BY BI DOPING IN N-TYPE AMORPHOUS (GESE3.5)100-XBIX [J].
BHATIA, KL .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :173-177
[6]   ON THE STRUCTURAL FEATURES OF DOPED AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS [J].
BHATIA, KL ;
GOSAIN, DP ;
PARTHASARATHY, G ;
GOPAL, ESR .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 86 (1-2) :65-71
[7]   BISMUTH-DOPED AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].
BHATIA, KL ;
GOSAIN, DP ;
PARTHASARATHY, G ;
GOPAL, ESR .
PHYSICAL REVIEW B, 1986, 34 (12) :8786-8793
[8]  
BHATIA KL, 1983, J NON-CRYST SOLIDS, V58, P151
[9]   PRESSURE-INDUCED EFFECTS IN BULK AMORPHOUS N-TYPE SEMICONDUCTORS (GESE3.5)100-XBIX [J].
BHATIA, KL ;
PARTHASARATHY, G ;
GOPAL, ESR .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 69 (2-3) :189-202
[10]   STUDY OF EFFECTS OF DOPANTS ON STRUCTURE OF VITREOUS SEMICONDUCTORS (GESE3.5)100-XMX (M = BI, SB) USING HIGH-PRESSURE TECHNIQUES [J].
BHATIA, KL ;
PARTHASARATHY, G ;
GOPAL, ESR ;
SHARMA, AK .
SOLID STATE COMMUNICATIONS, 1984, 51 (09) :739-742
123