ELECTRON SELF-TRAPPING IN A 2-BAND SYSTEM

被引：0

作者：

KLINGER, MI ^{[1
]}

TARASKIN, SN ^{[1
]}

机构：

[1] MOSCOW ENGN PHYS INST,MOSCOW 115409,USSR

来源：

JETP LETTERS | 1992年 / 56卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Strong electron self-trapping with energy gain close to the magnitude of the interband (or mobility) gap width is investigated. Interactions between the "self-trapping" state and the "non-parent" band states are taken into account. It gives rise to the change of occupation of the self-trapping state from initial single or zero up to almost double resulting in effective increase of electron-atom interaction. This effect restricts the value of pair self-trapping correlation energy.

引用

页码：207 / 212

页数：6

共 6 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2]

Haldane F. D., 1978, PHYS REV B, V13, P2553

[3]

Klinger M. I., 1988, Physics Reports, V165, P275, DOI 10.1016/0370-1573(88)90158-5

[4] ATOMIC QUANTUM DIFFUSION, TUNNELLING STATES AND SOME RELATED PHENOMENA IN CONDENSED SYSTEMS [J].

KLINGER, MI .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1983, 94 (05) :183-312

[5] THE ROLE OF INTERBAND INTERACTIONS IN FORMATION OF MOBILITY GAP NEGATIVE-U STATES IN GLASSY SEMICONDUCTORS [J].

KLINGER, MI ;

TARASKIN, SN .

SOLID STATE COMMUNICATIONS, 1991, 79 (03) :231-233

[6]

KLINGER MI, 1979, PROBLEMS ELECTRON PO

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