HYDROGENIC IMPURITIES IN TRIANGULAR GAAS QUANTUM-WELLS

被引：4
|
作者：
FERREYRA, JM [1 ]
PROETTO, CR [1 ]
机构：
[1] UNIV NACL TUCUMAN,INST FIS CIENCIAS EXACTAS & TECNOL,RA-4000 TUCUMAN,ARGENTINA
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.44.11231
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A variational calculation of the ground state of shallow donors and acceptors in triangular GaAs quantum wells is presented. This is connected to the properties of hydrogenic impurities in sawtooth-doped (or delta-doped n-i-p-i) superlattices. The binding energy, lateral extension, and vertical extension are calculated as functions of the impurity position in the well and delta-doping concentration.
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页码：11231 / 11235
页数：5
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