OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS

被引:39
作者
JIMENEZ, J [1 ]
GONZALEZ, MA [1 ]
HERNANDEZ, P [1 ]
DESAJA, JA [1 ]
BONNAFE, J [1 ]
机构
[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE
关键词
D O I
10.1063/1.334560
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1152 / 1160
页数:9
相关论文
共 36 条
[1]   OPTICAL PHOTOGENERATED TRAPS IN SEMI-INSULATING GAAS BULK MATERIAL [J].
BONNAFE, J ;
JIMENEZ, J ;
GONZALEZ, M ;
CASTAGNE, M .
PHYSICA SCRIPTA, 1984, 30 (03) :198-200
[2]  
BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P64
[3]   DIFFERENTIAL ANALYSIS OF TSC SPECTRA IN GAAS SEMI-INSULATING MATERIAL [J].
CASTAGNE, M ;
BONNAFE, J ;
ROMESTAN, J ;
FILLARD, JP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (30) :5555-5563
[4]  
CHANTRE A, 1979, THESIS LYON
[5]   QUENCHING AND ENHANCEMENT OF THE EXCITON AND SUBBAND-GAP ABSORPTION IN GAAS-CR USING 2-BEAM TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY [J].
DAVARI, B ;
DAS, P .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :807-809
[6]   THERMAL SPECTROSCOPY OF IMPURITY LEVELS BY OPTICAL-ABSORPTION IN BULK GAAS [J].
FILLARD, JP ;
BONNAFE, J ;
CASTAGNE, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (01) :K65-K68
[7]   A SPECIFIC TRAP LEVEL AT 78 MEV IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS-SI MATERIALS [J].
FILLARD, JP ;
CASTAGNE, M ;
BONNAFE, J ;
DEMURCIA, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6767-6770
[8]   INVESTIGATION OF THE ABSORPTION OF CR2+(3D4) IN GAAS [J].
HENNEL, AM ;
SZUSZKIEWICZ, W ;
BALKANSKI, M ;
MARTINEZ, G ;
CLERJAUD, B .
PHYSICAL REVIEW B, 1981, 23 (08) :3933-3942
[9]  
HENRY CH, 1979, PHYS REV B, V28, P989
[10]  
HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19