SURFACE-MORPHOLOGY AND CRYSTALLITE SIZE DURING GROWTH OF HYDROGENATED MICROCRYSTALLINE SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

The correlation between the surface morphology and the crystallite size during growth of hydrogenated microcrystalline silicon (mu c-Si:H) has been discussed using spectroscopie UV-visible phase-modulated ellipsometry. Raman spectroscopy and atomic force microscope (AFM). Through the deposition study of mu c-Si:H on Coming 7059 glass and Cr substrates from SiH4 highly diluted in H-2 and layer-by-layer (LbL) technique by plasma-enhanced chemical-vapor deposition (PECVD). we found that the surface roughness during mu c-Si:H growth strongly influenced the creation of the crystallite phase and the relaxation of Si network, The ion bombardment induces surface roughness and decreases the crystallinity in mu c-Si:H growth. The LbL technique using H-2 plasma promotes che nucleation and coalescence processes in the early stage of mu c-Si:H growth.