STRUCTURE AND PROPERTIES OF SILICON TITANIUM-OXIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION METHOD

被引：40
作者：
KAMADA, T
KITAGAWA, M
SHIBUYA, M
HIRAO, T
机构：
[1] Central Research Laboratories, Matsushita Electric Industrial Co Ltd, Moriguchi, Osaka, 570
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
HIGH DIELECTRIC; SILICON TITANIUM OXIDE; PLASMA CVD; STORAGE CAPACITOR; DRAM;
D O I：
10.1143/JJAP.30.3594
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a novel material of silicon titanium oxide with high dielectric constant and low leakage current. The silicon titanium oxide films were prepared by plasma-enhanced chemical vapor deposition (plasma CVD) with the gas mixture of TiCl4-SiH4-N2O. It was found that these films have intermediate properties of silicon dioxide and titanium dioxide by varying the ratio of SiH4/(SiH4 + TiCl4). The properties of silicon titanium oxide nearly corresponded to those of Ta2O5 when the gas mixture ratio was 0.075, with a dielectric constant of 18 and a leakage current density of 2.5 x 10(-8) A/cm2 at 1 MV/cm.
引用
收藏
页码：3594 / 3596
页数：3
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