STRUCTURE AND PROPERTIES OF SILICON TITANIUM-OXIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION METHOD

被引：40

作者：

KAMADA, T

KITAGAWA, M

SHIBUYA, M

HIRAO, T

机构：

[1] Central Research Laboratories, Matsushita Electric Industrial Co Ltd, Moriguchi, Osaka, 570

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

HIGH DIELECTRIC; SILICON TITANIUM OXIDE; PLASMA CVD; STORAGE CAPACITOR; DRAM;

D O I：

10.1143/JJAP.30.3594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a novel material of silicon titanium oxide with high dielectric constant and low leakage current. The silicon titanium oxide films were prepared by plasma-enhanced chemical vapor deposition (plasma CVD) with the gas mixture of TiCl4-SiH4-N2O. It was found that these films have intermediate properties of silicon dioxide and titanium dioxide by varying the ratio of SiH4/(SiH4 + TiCl4). The properties of silicon titanium oxide nearly corresponded to those of Ta2O5 when the gas mixture ratio was 0.075, with a dielectric constant of 18 and a leakage current density of 2.5 x 10(-8) A/cm2 at 1 MV/cm.

引用

页码：3594 / 3596

页数：3

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