CYCLIC CHARGING AND DISCHARGING OF OBLIQUELY DEPOSITED FETI THIN-FILMS

被引：1

作者：

UPADHYAY, KS ^{[1
]}

SINGH, M ^{[1
]}

VIJAY, YK ^{[1
]}

JAIN, IP ^{[1
]}

机构：

[1] UNIV RAJASTHAN,CTR UNIV SCI INSTRUMENTAT,JAIPUR 302004,RAJASTHAN,INDIA

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 1990年 / 15卷 / 12期

关键词：

D O I：

10.1016/0360-3199(90)90075-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The charging of FeTi thin films with hydrogen of 1000 Å thickness deposited at different angles (θ = 0°, 30°, 45°, 60° and 75°) was carried out at 1 atm hydrogen pressure and at room temperature. The discharging was carried out at 10-5 Torr pressure by heating. The resistance of FeTi films on charging with hydrogen increases and decreases on discharging. The change in resistance in subsequent charging cycles was found to decrease, indicating saturation stage. © 1990.

引用

页码：867 / 870

页数：4

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