ELECTRICAL CHARACTERISTICS AND CONTACT RESISTANCE OF B+-IMPLANTED AND BF2+-IMPLANTED SILICON DIODES WITH FURNACE AND RAPID THERMAL ANNEALING

被引：9

作者：

SIMARDNORMANDIN, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期

关键词：

D O I：

10.1109/T-ED.1985.22124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1354 / 1357

页数：4

共 13 条

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[4] DAMAGE EFFECTS IN BORON AND BF2 ION-IMPLANTED P+-N JUNCTIONS IN SILICON [J].

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JARJIS, RA .

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PROCTOR SJ, 1982, ELECTROCHEM

[7] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON [J].

SEIDEL, TE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :353-355

[8]

SIMARDNORMANDIN M, 1985, CAN J PHYS

[9] EFFECT OF THE ANNEALING CONDITIONS ON THE ELECTRICAL CHARACTERISTICS OF P+/N SHALLOW JUNCTIONS [J].

SOLMI, S ;

LANDI, E ;

NEGRINI, P .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :359-361

[10] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON [J].

TSAI, MY ;

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