SOLDER BUMP FORMATION USING ELECTROLESS PLATING AND ULTRASONIC SOLDERING

被引:38
作者
INABA, M [1 ]
YAMAKAWA, K [1 ]
IWASE, N [1 ]
机构
[1] TOSHIBA CO LTD,TOSHIBA RES & DEV CTR,MET & CERAM LAB,KAWASAKI 210,JAPAN
来源
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1990年 / 13卷 / 01期
关键词
D O I
10.1109/33.52858
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aluminium electrodes in the Si wafer were surface-treated, in the sequence involving palladium activation, Ni-P electroless plating, ultrasonic soldering with Pb-1Sn solder and dipping in Sn-37Pb to form second-stage solder bumps. The average bump height and the shear force were 20.3 µm and 26.8 g/pad, respectively. The shear force did not decrease after the heating test (150°C × 1000 h) or thermal cycle test (−65°C ↔ room temperature ↔ 150°C, 300 cycles). Aluminum diffused to amorphous Ni-P through the Pd layer. Ni-Sn intermetallic compounds were formed at the Pb-1 Sn/Ni-P interface. The low-cost polyester TAB was utilized to melt low-temperature second solder on inner lead bonding. No bridge occurred when applying this work to an LSI with 376 electrodes, 100 µ m wide with 150-µm pitch. © 1990 IEEE.
引用
收藏
页码:119 / 123
页数:5
相关论文
共 9 条
  • [1] HANSEN M, 1957, CONSTITUTION BINARY
  • [2] NEW FILM CARRIER ASSEMBLY TECHNOLOGY - TRANSFERRED BUMP TAB
    HATADA, K
    FUJIMOTO, H
    MATSUNAGA, K
    [J]. IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1987, 10 (03): : 335 - 340
  • [3] Inaba M., 1987, Transactions of the Institute of Electronics, Information and Communication Engineers C, VJ70C, P1466
  • [4] KAWANOBE T, 1981, 31RD P EL COMP C, P149
  • [5] KAWANOBE T, 1988, 33RD P ECC, P221
  • [6] VLSI CHIP INTERCONNECTION TECHNOLOGY USING STACKED SOLDER BUMPS
    MATSUI, N
    SASAKI, S
    OHSAKI, T
    [J]. IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1987, 10 (04): : 566 - 570
  • [7] MIKULAS W, 1987, T AIME, V124, P111
  • [8] MILLER LF, 1969, IBM J RES DEV, V13, P289
  • [9] TOTTA PA, 1969, IBM J RES DEV, V13, P220