EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS

被引：30
|
作者：
MINO, N
KOBAYASHI, M
KONAGAI, M
TAKAHASHI, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期
关键词：
D O I：
10.1063/1.336197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：793 / 796
页数：4
相关论文
共 50 条
  • [31] SELECTIVE POLYCRYSTALLINE AND EPITAXIAL-GROWTH BY SILICON MOLECULAR-BEAM EPITAXY
    GIBBINGS, CJ
    DAVIS, JR
    HOCKLY, M
    TUPPEN, CG
    THIN SOLID FILMS, 1990, 184 (1 -2 pt 2) : 221 - 227
  • [32] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1174 - L1176
  • [33] GROWTH OF ZNSE ON GE(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YAMAGUCHI, E
    TAKAYASU, I
    MINATO, T
    KAWASHIMA, M
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 885 - 889
  • [34] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    YAO, T
    OGURA, M
    MATSUOKA, S
    MORISHITA, T
    APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501
  • [35] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB FOR P-I-N PHOTODETECTORS
    SINGH, G
    MICHEL, E
    JELEN, C
    SLIVKEN, S
    XU, J
    BOVE, P
    FERGUSON, I
    RAZEGHI, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 782 - 785
  • [36] THE GROWTH OF HIGH-QUALITY INGAAS AND INALAS BY MOLECULAR-BEAM EPITAXY
    BROWN, AS
    DELANEY, MJ
    GRIEM, T
    HENIGE, J
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A22 - A23
  • [37] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAASSB
    CHEN, HC
    RANE, AB
    ZHANG, DX
    MURRY, SJ
    PEI, SS
    TAO, YK
    PEARAH, PJ
    CHENG, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 706 - 708
  • [38] THE GROWTH OF HIGH-QUALITY CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY
    RENO, JL
    CARR, MJ
    GOURLEY, PL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1006 - 1012
  • [39] THE GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    HERSEE, SD
    MARTIN, PA
    CHIN, A
    BALLINGALL, JM
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 973 - 976
  • [40] High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy
    Jeganathan, Kulandaivel
    Kitamura, Toshio
    Shimizu, Mitsuaki
    Okumura, Hajime
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (1 A/B):
12345