EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS

被引：30
作者：
MINO, N
KOBAYASHI, M
KONAGAI, M
TAKAHASHI, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期
关键词：
D O I：
10.1063/1.336197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：793 / 796
页数：4
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