EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS

被引：30

作者：

MINO, N

KOBAYASHI, M

KONAGAI, M

TAKAHASHI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：793 / 796

页数：4

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