INTERFACE CAPACITY AND FLAT-BAND POTENTIAL OF CDIN2SE4 AND CDCR2SE4

被引：0

作者：

SAVADOGO, O

YAZBECK, J

DESCHANVRES, A

机构：

来源：

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1984年 / 9卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：145 / 152

页数：8

共 14 条

[1] MIXED-CONDUCTION MODEL FOR CHARGE TRANSPORT IN N-TYPE CDCR2SE4 [J].

AMITH, A ;

FRIEDMAN, L .

PHYSICAL REVIEW B, 1970, 2 (02) :434-&

[2] ELECTRICAL-CONDUCTIVITY OF P-TYPE CDCR-2SE-4 SINGLE-CRYSTALS [J].

ASAKA, M ;

MATSUMOTO, S ;

NIIMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (04) :741-742

[3] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].

BUTLER, MA ;

GINLEY, DS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :228-232

[4] ELECTRONIC BAND STRUCTURES OF SEMICONDUCTING FERROMAGNETIC SPINELS CDCR2S4 AND CDCR2SE4 [J].

KAMBARA, T ;

OGUCHI, T ;

GONDAIRA, KI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (08) :1493-1511

[5]

MAYAMLIN VA, 1967, ELECTRO SEMI CONDUCT

[6]

MILLER A, 1981, SOLID STATE PHYS, V36, P119

[7] PHOTOEMISSION DETERMINATION OF THE OCCUPIED D-BAND POSITION FOR CDCR2SE4 AND CDCR2S4 [J].

MINISCALCO, WJ ;

MCCOLLUM, BC ;

STOFFEL, NG ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1982, 25 (04) :2947-2950

[8] SELF-CONSISTENT ELECTRONIC-STRUCTURES OF MAGNETIC SEMICONDUCTORS BY A DISCRETE VARIATIONAL X-ALPHA CALCULATION .1. FERROMAGNETIC SPINELS, CDCR2S4 AND CDCR2SE4 [J].

OGUCHI, T ;

KAMBARA, T ;

GONDAIRA, KI .

PHYSICAL REVIEW B, 1980, 22 (02) :872-879

[9] CRYSTAL-STRUCTURE EFFECTS IN VALENCE BAND OF DEFECT ZINCBLEND SEMICONDUCTOR CDIN2SE4 [J].

PICCO, P ;

ABBATI, I ;

BRAICOVICH, L ;

CERRINA, F ;

LEVY, F ;

MARGARITONDO, G .

PHYSICS LETTERS A, 1978, 65 (5-6) :447-449

[10]

TENNE R, 1982, J ELECTROCHEM SOC, V129, P1509

← 1 2 →