DIELECTRIC BREAKDOWN IN SIO2 LAYERS ON SILICON

被引：0

作者：

FRITZSCHE, C

机构：

来源：

ZEITSCHRIFT FUR ANGEWANDTE PHYSIK | 1967年 / 24卷 / 01期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：48 / +

页数：1

共 10 条

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[4]

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[8] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :368-+

[9] Electric breakdown of glasses and crystals as a function of temperature [J].

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[10]

Whitehead S, 1953, DIELECTRIC BREAKDOWN

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