SURFACE STUDIES ON AS-DEPOSITED A-SI-H FILMS

被引：3
作者：
FOLLER, M
HERION, J
BEYER, W
WAGNER, H
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷
关键词：
D O I：
10.1016/0022-3093(85)90824-5
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：979 / 982
页数：4
相关论文
共 50 条
  • [41] CURRENT FLUCTUATIONS IN THIN A-SI-H FILMS
    IHN, T
    SAVCHENKO, AK
    RAIKH, ME
    SCHWARZ, R
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 523 - 526
  • [42] HYDROGEN NMR IN A-SI-H FILMS ON SUBSTRATES
    VANDERHEIDEN, ED
    OHLSEN, WD
    TAYLOR, PC
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 115 - 120
  • [43] KINETICS OF PLASMA DEPOSITION OF A-SI-H FILMS
    HOTTA, S
    OKAMOTO, H
    HAMAKAWA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L562 - L564
  • [44] GROWTH-PROCESSES OF RF GLOW-DISCHARGE DEPOSITED A-SI-H AND A-GE-H FILMS
    ANTOINE, AM
    DREVILLON, B
    CABARROCAS, PRI
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 769 - 772
  • [45] ANODIC-OXIDATION OF A-SI-H FILMS
    YAMAMOTO, H
    ARIMOTO, S
    HASEGAWA, H
    OHNO, H
    NANJO, J
    [J]. ELECTRONICS LETTERS, 1983, 19 (01) : 6 - 7
  • [46] THE PASSIVATION OF SILICON DEVICES BY A-SI-H FILMS
    HE, YL
    [J]. SOLID-STATE ELECTRONICS, 1989, 32 (05) : 355 - 359
  • [47] MICROINHOMOGENEITIES IN GLOW-DISCHARGE DEPOSITED A-SI-H LAYERS
    ZENTAI, G
    FUSTOSSWEGNER, M
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 225 - 228
  • [48] MODEL FOR THE GROWTH OF PLASMA DEPOSITED A-SI-H AND RELATED MATERIALS
    STREET, RA
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 645 - 648
  • [49] INSITU STUDY OF THE SI-H BOND IN A-SI-H ULTRATHIN FILMS
    BLAYO, N
    BLOM, P
    DREVILLON, B
    [J]. PHYSICA B, 1991, 170 (1-4): : 566 - 570
  • [50] ISOTOPIC HYDROGEN-EXCHANGE STUDIES OF THE A-SI-H SURFACE DURING GROWTH
    ABELSON, JR
    MANDRELL, L
    DOYLE, JR
    MYERS, A
    MALEY, N
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 184 - 186
12345