PHOTOELECTROCHEMICAL EVOLUTION OF HYDROGEN ON PARA-INDIUM PHOSPHIDE

被引:68
作者
SZKLARCZYK, M [1 ]
BOCKRIS, JO [1 ]
机构
[1] TEXAS A&M UNIV,DEPT CHEM,COLLEGE STN,TX 77843
关键词
D O I
10.1021/j150666a026
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:5241 / 5245
页数:5
相关论文
共 46 条
[1]   THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].
BARD, AJ ;
BOCARSLY, AB ;
FAN, FRF ;
WALTON, EG ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677
[2]  
BECK F, 1959, Z ELEKTROCHEM, V63, P500
[3]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[4]  
Bjorken JD., 1964, RELATIVISTIC QUANTUM
[5]  
Bockris J, 1964, ELECTROCHIM ACTA, V9, P31
[6]  
BOCKRIS JO, 1983, APPL PHYS COMMUN, V2, P295
[7]   RATE OF PHOTOELECTROCHEMICAL GENERATION OF HYDROGEN AT P-TYPE SEMICONDUCTORS [J].
BOCKRIS, JOM ;
UOSAKI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1348-1355
[8]   ELECTROLYTIC HYDROGEN EVOLUTION KINETICS AND ITS RELATION TO THE ELECTRONIC AND ADSORPTIVE PROPERTIES OF THE METAL [J].
CONWAY, BE ;
BOCKRIS, JO .
JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (03) :532-541
[9]   SURFACE POTENTIALS AND ADSORPTION PROCESS ON METALS [J].
CULVER, RV ;
TOMPKINS, FC .
ADVANCES IN CATALYSIS, 1959, 11 :67-131
[10]   IMPROVEMENT OF PHOTO-ELECTROCHEMICAL HYDROGEN GENERATION BY SURFACE MODIFICATION OF P-TYPE SILICON SEMICONDUCTOR PHOTO-CATHODES [J].
DOMINEY, RN ;
LEWIS, NS ;
BRUCE, JA ;
BOOKBINDER, DC ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (02) :467-482