AVALANCHE CHARACTERISTICS AND FAILURE MECHANISM OF HIGH VOLTAGE DIODES

被引：94

作者：

EGAWA, H

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：754 / +

页数：1

相关论文

共 4 条

[1] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[2] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].

MILLER, SL .

PHYSICAL REVIEW, 1957, 105 (04) :1246-1249

[3] MICROPLASMAS IN SILICON [J].

ROSE, DJ .

PHYSICAL REVIEW, 1957, 105 (02) :413-418

[4] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769