SIMS ANALYSIS OF SILICON INSULATOR STRUCTURES FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON

被引：20

作者：

KILNER, JA ^{[1
]}

LITTLEWOOD, SD ^{[1
]}

HEMMENT, PLF ^{[1
]}

MAYDELLONDRUSZ, E ^{[1
]}

STEPHENS, KG ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期

关键词：

D O I：

10.1016/0167-5087(83)91045-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：573 / 578

页数：6

共 17 条

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[8] THE ROLE OF STABILIZED BACK-SURFACE DAMAGE IN CONTROLLING INTERNAL SIOX NUCLEATION AND DENUDATION ZONES IN SI [J].

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[9] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI [J].

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APPLIED PHYSICS LETTERS, 1981, 38 (11) :891-893

[10] GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI - REPLY [J].

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