POSSIBILITY OF SELF-EPITAXIAL GROWTH OF LASER IRRADIATED ALSB FILMS

被引：23

作者：

BAUFAY, L

PIGEOLET, A

LAUDE, LD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：660 / 665

页数：6

共 8 条

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ANDREW, R ;

LEDEZMA, M ;

LOVATO, M ;

WAUTELET, M ;

LAUDE, LD .

APPLIED PHYSICS LETTERS, 1979, 35 (05) :418-420

[2] PHASE-TRANSITIONS IN COMPOUND SEMICONDUCTOR-FILMS TRIGGERED BY LASER IRRADIATION [J].

ANDREW, R ;

BAUFAY, L ;

PIGEOLET, A ;

LAUDE, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4862-4865

[3]

ANDREW R, 1980, J PHYS PARIS C, V41, P71

[4]

ANDREW R, 1981, LASER ELECTRON BEAM, P719

[5] LASER-INDUCED FORMATION OF CDTEXSE1-X SEMICONDUCTING COMPOUNDS [J].

BAUFAY, L ;

DISPA, D ;

PIGEOLET, A ;

LAUDE, LD .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :143-147

[6]

Baufay L., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P839

[7] PREPARATION OF ALSB FILMS BY LASER ANNEALING [J].

BAUFAY, L ;

ANDREW, R ;

PIGEOLET, A ;

LAUDE, LD .

THIN SOLID FILMS, 1982, 90 (01) :69-74

[8]

GODFREY DJ, 1980, J PHYS PARIS, V41

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