INFLUENCE OF INTERFACE STATES ON FIELD-EFFECT AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-OXIDE A-SI-H STRUCTURES

被引:12
|
作者
SUZUKI, T [1 ]
HIROSE, M [1 ]
UEDA, M [1 ]
OSAKA, Y [1 ]
机构
[1] HIROSHIMA UNIV, DEPT ELECT ENGN, HIROSHIMA 724, JAPAN
来源
SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期
关键词
D O I
10.1016/0165-1633(82)90071-5
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:285 / 292
页数:8
相关论文
共 50 条
  • [21] INFLUENCE OF DEEP STATES ON THE CAPACITANCE-VOLTAGE CHARACTERISTIC OF THE SEMICONDUCTOR ELECTROLYTE INTERFACE
    SARKISYAN, AG
    ARUTYUNYAN, VM
    SHAKHNAZARYAN, GE
    SARIBEKYAN, GV
    SOVIET ELECTROCHEMISTRY, 1988, 24 (04): : 478 - 484
  • [22] THE ROLE OF INTERFACE STATES IN THE EVALUATION OF DENSITY OF STATES FROM FIELD-EFFECT MEASUREMENTS IN DC-SPUTTERED A-SI-H
    SMID, V
    MARES, JJ
    DUNG, NM
    STOURAC, L
    KRISTOFIK, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 311 - 314
  • [23] Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics
    Wei, Xixiong
    Deng, Wanling
    Fang, Jielin
    Ma, Xiaoyu
    Huang, Junkai
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2017, 80 (01):
  • [24] Nonmonotonous Capacitance-Voltage Characteristics in Metal-Glass-Semiconductor Structures
    Vlasov, S. I.
    Nasirov, A. A.
    Mamatkarimov, O. O.
    Ergasheva, M. A.
    SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY, 2008, 44 (03) : 250 - 251
  • [25] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SEMICONDUCTORS.
    Goodman, Nancy B.
    Fritzsche, H.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1980, 42 (01): : 149 - 165
  • [26] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
    GOODMAN, NB
    FRITZSCHE, H
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
  • [27] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS.
    Baek, Junho
    Shur, Michael
    Daniels, Robert R.
    Arch, David K.
    Abrokwah, Jonathon K.
    Tufte, Obert N.
    IEEE Transactions on Electron Devices, 1987, ED-34 (08) : 1650 - 1657
  • [28] Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures
    S. I. Vlasov
    A. A. Nasirov
    O. O. Mamatkarimov
    M. A. Ergasheva
    Surface Engineering and Applied Electrochemistry, 2008, 44
  • [29] INFLUENCE OF FIXED CHARGE IN THE DIELECTRIC ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MSDS STRUCTURES
    SYSOEV, BI
    BEZRYADIN, NN
    SYNOROV, VF
    SOVIET MICROELECTRONICS, 1980, 9 (02): : 68 - 72
  • [30] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL/OXIDE/6H-SILICON CARBIDE STRUCTURE
    TOKURA, N
    HARA, K
    MIYAJIMA, T
    FUMA, H
    HARA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5567 - 5573