共 50 条
- [21] INFLUENCE OF DEEP STATES ON THE CAPACITANCE-VOLTAGE CHARACTERISTIC OF THE SEMICONDUCTOR ELECTROLYTE INTERFACE SOVIET ELECTROCHEMISTRY, 1988, 24 (04): : 478 - 484
- [23] Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2017, 80 (01):
- [25] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SEMICONDUCTORS. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1980, 42 (01): : 149 - 165
- [26] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
- [28] Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures Surface Engineering and Applied Electrochemistry, 2008, 44
- [29] INFLUENCE OF FIXED CHARGE IN THE DIELECTRIC ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MSDS STRUCTURES SOVIET MICROELECTRONICS, 1980, 9 (02): : 68 - 72
- [30] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL/OXIDE/6H-SILICON CARBIDE STRUCTURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5567 - 5573